NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.
GENERAL FEATURES
● VDSS =75V,ID =210A
RDS(ON) < 4mΩ @ VGS=10V
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Excellent package for good heat dissipation
Application
●
Automotive applications
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
100% UIS TESTED!
100% ΔVds TESTED!
Schematic diagram
Marking and pin Assignment
TO-247 top view