詳細(xì)信息
DESCRIPTION
The NCE75H11 uses advanced trench technology a
design to provide excellent R
with low gate charge.
DS(ON)
can be used in a wide variety of applications.
GENERAL FEATURES V = 75V,I =110A
DS D
< 9m @ V =10V (Typ:7.5m)
R
DS(ON) GS
Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Good stability and uniformity with high E
AS Excellent package for good heat dissipation
Application Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply