DESCRIPTION
The NCE75H11 uses advanced trench technology a
design to provide excellent R
with low gate charge.
DS(ON)
can be used in a wide variety of applications.
 
GENERAL FEATURES  V  = 75V,I  =110A
DS D
 < 9m @ V =10V  (Typ:7.5m)
R
DS(ON) GS
  Special process technology for high ESD capability  High density cell design for ultra low Rdson  Fully characterized Avalanche voltage and current  Good stability and uniformity with high E
AS  Excellent package for good heat dissipation
 
Application  Power switching application  Hard Switched and High Frequency Circuits  Uninterruptible Power Supply