DESCRIPTION                                           ·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 400V (Min)-BUS13
450V (Min)-BUS13A
 
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
 

Absolute maximum ratings(T_a=25℃)

SYMBOL	PARAMETER		MAX	UNIT
VCES	Collector- Emitter Voltage(VBE= 0)	BUS13	850	V
		BUS13A	1000
VCEO	Collector-Emitter Voltage	BUS13	400	V
		BUS13A	450
VEBO	Emitter-Base Voltage		9	V
IC	Collector Current-Continuous		15	A
ICM	Collector Current-Peak tp< 2ms		30	A
IB	Base Current-Continuous		6	A
IBM	Base Current-Peak tp< 2ms		9	A
PC	Collector Power Dissipation @TC=25℃		175	W
Tj	Junction Temperature		200	℃
Tstg	StorageTemperature Range		-65~200	℃

 
THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	1.0	℃/W

 
ELECTRICAL CHARACTERISTICS
T_C=25℃unless otherwise specified

SYMBOL	PARAMETER		CONDITIONS	MIN	TYP.	MAX	UNIT
VCEO(SUS)	Collector-Emitter Sustaining Voltage	BUS13	IC= 0.1A ; IB= 0; L= 25mH	400			V
		BUS13A		450
VCE(sat)	Collector-Emitter Saturation Voltage	BUS13	IC= 10A; IB= 2A			1.5	V
		BUS13A	IC= 8A; IB= 1.6A			1.5
VBE(sat)	Base-Emitter Saturation Voltage	BUS13	IC= 10A; IB= 2A			1.6	V
		BUS13A	IC= 8A; IB= 1.6A			1.6
ICES	Collector Cutoff Current		VCE=VCESMmax; VBE= 0 VCE= VCESMmax;VBE= 0;TJ= 125℃			1 4	mA
IEBO	Emitter Cutoff Current		VEB= 9V; IC= 0			10	mA
hFE	DC Current Gain		IC= 1.5A ; VCE= 5V	15		50
Switching Times, Resistive Load
ton	Turn-On Time		For BUS13 IC= 10A ;IB1= -IB2= 2A   For BUS13A IC= 8A ;IB1= -IB2= 1.6A			1.0	μs
tstg	Storage Time					4.0	μs
tf	Fall Time					0.8	μs