詳細信息
供應2SD822三極管,TO-3，有意者請聯(lián)系
iscSilicon NPN Power Transistor 2SD822
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·LowCollector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 6A
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 1500 | V |
VCEO | Collector-Emitter Voltage | 600 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current- Continuous | 7 | A |
IE | Emitter Current- Continuous | -7 | A |
PC | Collector Power Dissipation @ TC≤90℃ | 50 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
iscSilicon NPN Power Transistor 2SD822
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 6A; IB= 1.2A | 5.0 | V | ||
VBE(sat) | Base-Emitter Saturation Voltage | IC= 6A; IB= 1.2A | 1.5 | V | ||
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 | 10 | μA | ||
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 | 1.0 | mA | ||
hFE | DC Current Gain | IC= 1A; VCE= 5V | 8 | |||
COB | Output Capacitance | IE= 0; VCB= 10V; ftest= 1.0MHz | 165 | pF | ||
fT | Current-Gain—Bandwidth Product | IC= 0.1A; VCE= 10V | 3 | MHz | ||
tf | Fall Time | IC= 6A, IBend= 1.2A | 1.0 | μs |