詳細信息
STP75NF68,TO-220,DIP/MOS,N場,68V,80A,0.014Ω
| Parameter | Symbol | Conditions | Value | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=250µA | 68 | V |
| Continuous drain current | ID | TC=25℃ | 80 | A |
| Pulsed drain current | IDM | TC=25℃ | 320 | A |
| Power dissipation | Ptot | TC=25℃ | 190 | W |
| Gate source voltage | VGS | ±20 | V | |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=250µA | 4 | V |
| Avalanche energy, single pulse | EAS | ID=25A, RGS=25? | 700 | mJ |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=40A | 14 | m? |
| Input capacitance | Ciss | VGS=0V,VDS=15V, f=1MHz | 2550 | PF |
| Transconductance | gfs | VDS=15V, ID =40A | 60 | S |
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