詳細(xì)信息
isc Silicon PNP Power Transistor 2SA1837
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -230V(Min)
·High Current-Gain Bandwidth Product
·Complement to Type 2SC4793
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -230 | V |
VCEO | Collector-Emitter Voltage | -230 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -1 | A |
IB | Base Current-Continuous | -0.1 | A |
PC | Collector Power Dissipation @Ta=25℃ | 2 | W |
Collector Power Dissipation @TC=25℃ | 20 | ||
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
iscSilicon PNP Power Transistor 2SA1837
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA ; IB= 0 | -230 | V | ||
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -500mA; IB= -50mA | -1.5 | V | ||
VBE(on) | Base-Emitter On Voltage | IC= -500mA ; VCE= -5V | -1.0 | V | ||
ICBO | Collector Cutoff Current | VCB= -230V ; IE=0 | -1.0 | μA | ||
IEBO | Emitter Cutoff Current | VEB= -5V; IC=0 | -1.0 | μA | ||
hFE | DC Current Gain | IC= -100mA; VCE= -5V | 100 | 320 | ||
COB | Output Capacitance | IE= 0; VCB= -10V; f= 1MHz | 30 | pF | ||
fT | Current-Gain—Bandwidth Product | IC= -100mA ; VCE= -10V | 70 | MHz |