SS8050 TRANSISTOR (NPN)
FEATURES
Complimentary to SS8550
MARKING: Y1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1.5 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA
Collector cut-off current ICEO VCB=20V, IE=0 0.1 μA
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA
hFE(1) VCE=1V, IC= 100mA 120 400
DC current gain
hFE(2) VCE=1V, IC= 800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V
Transition frequency fT
VCE=10V, IC= 50mA
f=30MHz
100 MHz
CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400