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參數資料
| 型號： | 2N3700 |
| 廠商： | Boca Semiconductor Corp. |
| 英文描述： | GENERAL TRANSISTOR NPN SILICON |
| 中文描述： | 一般晶體管NPN硅 |
| 文件頁數： | 2/2頁 |
| 文件大小： | 22K |
| 代理商： | 2N3700 |
Parameter
Collector – Emitter Sustaining Voltage
(I
B
= 0)
Collector – Base Cut-off Current
(I
E
= 0)
Emitter Cut-off Current (I
C
= 0)
Collector – Emitter Saturation Voltage
Test Conditions
I
C
=10mA
Min.
80
Typ.
Max.
Unit
V
nA
μ
A
nA
V
V
V
-
-
-
-
-
-
V
V
10
10
10
0.2
0.5
1.1
50
90
100
50
15
300
140
7
V
CB
= 90V
V
CB
= 90V
V
EB
= 5V
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 0.1mA
I
C
= 10mA
I
C
= 150mA
I
C
= 500mA
I
C
= 1A
I
C
= 150mA
I
C
= 100
μ
A
T
amb
= 150°C
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
I
E
= 100
μ
A
V
CEO(sus)*
I
CBO*
I
EBO*
V
CE(sat)*
V
BE(sat)*
h
FE*
Base – Emitter Saturation Voltage
DC Current Gain (V
CE
= 10V)
V
(BR)CBO
Collector-base Breakdown Voltage
(I
E
= 0)
Emitter-base BreakdownVoltage
(I
C
= 0)
V
(BR)EBO
2N3700DCSM
LAB
SEME
Semelab plc.
Telephone (01455) 556565.Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
Parameter
Transition Frequency
Small Signal Current Gain
Emitter-base Capacitance
Collector-base Capacitance
Feedback time constant
Test Conditions
I
C
= 50mA
I
C
= 1mA
I
C
= 0
I
C
= 0
I
C
= 10mA
Min.
100
80
Typ.
Max.
200
400
60
12
400
Unit
MHz
-
pF
pF
ps
ELECTRICAL CHARACTERISTICS (per Device)
(Tcase= 25°C unless otherwise stated)
f
T
hfe
C
EBO
C
CBO
rbb
’C
b’c
V
CE
= 10V
V
CE
= 5V
V
EB
= 0.5V
V
CB
= 10V
V
CB
= 10V
f = 20MHz
f = 1kHz
f = 1MHz
f = 1MHz
f = 4MHz
25
* Pulse test t
p
= 300
μ
s ,
δ ≤ 1
%
DYNAMIC CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
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|---|---|
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