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參數資料
| 型號： | 3KASMC43HE3/9AT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件頁數： | 3/5頁 |
| 文件大小： | 77K |
| 代理商： | 3KASMC43HE3/9AT |
New Product
3KASMC10 thru 3KASMC43A
Vishay General Semiconductor
Document Number: 88480
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
3
Note
(1)
Mounted on minimum recommended pad layout
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C unless otherwise noted)
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to ambient air
(1)
SYMBOL
R
JA
VALUE
UNIT
77.5
°C/W
Thermal resistance, junction to leads
R
JL
18.3
ORDERING INFORMATION
(Example)
PREFERRED P/N
3KASMC10AHE3/57T
(1)
3KASMC10AHE3/9AT
(1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.211
57T
850
7" diameter plastic tape and reel
0.211
9AT
3500
13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.1
1
10
100
0.1
1
10
100
1000
10000
P
P
w
e
W
)
t
d
- P
u
lse
W
idth (
μ
s)
0
25
50
75
100
0
50
T
J
- Initial Temperat
u
re (°C)
100
150
200
P
u
l
w
e
P
)
u
r
P
)
D
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
r
= 10
μ
s
Peak
V
al
u
e
I
PPM
Half
V
al
u
e -
I
PPM
I
PP
2
t
d
10/1000
μ
s
W
a
v
eform
as defined
b
y R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
I
P
u
l
u
r
R
T
J
= 25 °C
P
u
lse
W
idth (t
)
is defined as the Point
w
here the Peak C
u
rrent
decays to 50 % of I
PPM
100
1000
10 000
10
20
30
40
50
C
J
u
n
V
W
M
- Re
v
erse Stand-off
V
oltage (
V
)
T
= 25 °C
f = 1.0 MHz
V
sig
= 50 m
V
p-p
Meas
u
red at
Zero Bias
Meas
u
red at
Stand-Off
V
oltage
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