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參數(shù)資料
| 型號(hào)： | 5082-E103-EH000 |
| 英文描述： | LF411 Low Offset, Low Drift JFET Input Operational Amplifier; Package: TO-99; No of Pins: 8; Qty per Container: 20; Container: Tray |
| 中文描述： | 低電流七段顯示器 |
| 文件頁(yè)數(shù)： | 14/20頁(yè) |
| 文件大小： | 340K |
| 代理商： | 5082-E103-EH000 |
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14
Device
Series
HDSP-
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Luminous Intensity/Segment
[1,2]
(Digit Average)
250
420
I
F
= 4 mA
I
V
mcd
1300
I
F
= 10 mA
1.7
I
F
= 4 mA
Forward Voltage/Segment or DP
V
F
1.8
V
I
F
= 5 mA
A80x
2.1
2.5
I
F
= 20 mA Pk
Peak Wavelength
λ
PEAK
583
nm
Dominant Wavelength
[3,5]
λ
d
581.5
585
592.5
nm
Reverse Voltage/Segment or DP
[4]
V
R
3.0
30
V
I
R
= 100
μ
A
Temperature Coefficient of
V
F
/Segment or DP
V
F
/
°
C
-2
mV/
°
C
Thermal Resistance LED
Junction-to-Pin
R
θ
J-PIN
200
°
C/W
Yellow
Device
Series
HDSP-
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Luminous Intensity/Segment
[1,2]
(Digit Average)
250
475
I
F
= 4 mA
I
V
mcd
1500
I
F
= 10 mA
1.9
I
F
= 4 mA
Forward Voltage/Segment or DP
V
F
2.0
V
I
F
= 10 mA
A90x
2.1
2.5
I
F
= 20 mA Pk
Peak Wavelength
λ
PEAK
566
nm
Dominant Wavelength
[3,5]
λ
d
571
577
nm
Reverse Voltage/Segment or DP
[4]
V
R
3.0
30
V
I
R
= 100
μ
A
Temperature Coefficient of
V
F
/Segment or DP
V
F
/
°
C
-2
mV/
°
C
Thermal Resistance LED
Junction-to-Pin
R
θ
J-PIN
200
°
C/W
Green
Notes:
1. Device case temperature is 25
°
C prior to the intensity measurement.
2. The digits are categorized for luminous intensity. The intensity category is designated by a letter on the side of the package.
3. The dominant wavelength,
λ
d
, is derived from the CIE chromaticity diagram and is the single wavelength which defines the color of the
device.
4. Typical specification for reference only. Do not exceed absolute maximum ratings.
5. The yellow (HDSP-A800) and Green (HDSP-A900) displays are categorized for dominant wavelength. The category is designated by a
number adjacent to the luminous intensity category letter.
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