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參數資料
| 型號： | AD408M86VTB-5 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low voltage operation is more suitable to be used on battery backup, portable electronic |
| 中文描述： | 低電壓操作更適合于備用電池，使用便攜式電子 |
| 文件頁數： | 10/28頁 |
| 文件大?。?/td> | 211K |
| 代理商： | AD408M86VTB-5 |
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Rev.1
Page 10
AC Characteristics
(
T
a
= 0 to + 70
°C
, V
cc
= 3.3V
%, V
ss
= 0V) *1, *2, *3, *4
Test conditions
Output load: one TTL Load and 100pF (V
CC
= 3.3V
%)
Input timing reference levels:
V
IH
= 2.0V, V
IL
= 0.8V (V
CC
= 3.3V
%)
Output timing reference levels:
V
OH
= 2.0V, V
OL
= 0.8V
10
±
10
±
10
±
Read, Write, Read- Modify- Write and Refresh Cycles
(Common Parameters)
Parameter
Symbol
AD404M42V
Unit
Notes
-5
-6
Min
Max
Min
Max
Random read or write cycle time
t
RC
84
-
104
-
ns
RAS precharge time
t
RP
30
-
40
-
ns
CAS precharge time in normal mode
t
CPN
10
-
10
-
ns
RAS pulse width
t
RAS
50
10000
60
10000
ns
5
CAS pulse width
t
CAS
8
10000
10
10000
ns
6
Row address setup time
t
ASR
0
-
0
-
ns
Row address hold time
t
RAH
8
-
10
-
ns
Column address setup time
t
ASC
0
-
0
-
ns
7
Column address hold time
t
CAH
8
-
10
-
ns
RAS to CAS delay time
t
RCD
12
37
14
45
ns
8
RAS to column address delay time
t
RAD
10
25
12
30
ns
9
Column address to RAS lead time
t
RAL
25
-
30
-
ns
RAS hold time
t
RSH
8
-
10
-
ns
CAS hold time
t
CSH
38
-
40
-
ns
CAS to RAS precharge time
t
CRP
5
-
5
-
ns
10
OE to Din delay time
t
OED
12
-
15
-
ns
Transition time (rise and fall)
t
T
1
50
1
50
ns
11
Refresh period
t
REF
-
32
-
32
ms
Refresh period (S- Version)
t
REF
-
128
-
128
ms
CAS to output in Low- Z
t
CLZ
0
-
0
-
ns
CAS delay time from Din
t
DZC
0
-
0
-
ns
OE delay time from Din
t
DZO
0
-
0
-
ns
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