iscSilicon NPN Power Transistor                2SC2438  
 
 
DESCRIPTION                                             
·Low Collector Saturation Voltage-
  :V_CE(sat)= 0.5(V)(Max)@ I_C= 4A
·High Switching Speed
·High Reliability
 
 
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
 

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	150	V
VCEO	Collector-Emitter Voltage	80	V
VEBO	Emitter-Base Voltage	7	V
IC	Collector Current-Continuous	7	A
IB	Base Collector Current-Continuous	2	A
PC	Total Power Dissipation @ TC=25℃	50	W
TJ	JunctionTemperature	150	℃
Tstg	StorageTemperature Range	-55~150	℃

 
THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	2.5	℃/W

 
 
iscSilicon NPN Power Transistor                2SC2438 
 
ELECTRICAL CHARACTERISTICS
T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= 10mA; IB= 0	80			V
V(BR)CBO	Collector-Base Breakdown Voltage	IC= 0.1mA; IE= 0	150			V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE= 0.1mA; IC= 0	7			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 4A; IB= 0.4A			0.5	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 4A; IB= 0.4A			1.2	V
ICBO	Collector Cutoff Current	VCB= 150V; IE= 0			100	μA
IEBO	Emitter Cutoff Current	VEB= 7V; IC= 0			100	μA
hFE	DC Current Gain	IC= 4A; VCE= 1V	30
Switching Times
ton	Turn-On Time	IC= 4A; IB1= -IB2= 0.4A; RL= 5Ω			0.5	μs
tstg	Storage Time				2.5	μs
tf	Fall Time				0.3	μs