詳細信息
AOD409/AOI409
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD/I409 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Features
VDS (V) = -60V
ID = -26A (VGS = -10V)
RDS(ON) < 40m?? (VGS = -10V) @ -20A
RDS(ON) < 55m?? (VGS = -4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested