- 您現在的位置：買賣IC網 > PDF目錄376632 > DEMO-ATF-5X1M4A Demonstration circuit board for ATF-541M4 and ATF-551M4 PDF資料下載
參數資料
| 型號： | DEMO-ATF-5X1M4A |
| 英文描述： | Demonstration circuit board for ATF-541M4 and ATF-551M4 |
| 中文描述： | 論證亞歐信托基金電路板- 541M4和ATF - 551M4 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 70K |
| 代理商： | DEMO-ATF-5X1M4A |
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
900 MHz Performance:
1.1 dB NF, 14.5 dB G
A
Characterized for End-of-
Life Battery Use ( 2.7 V)
SOT-363 ( SC-70) Plastic
Package
Tape-and-Reel Packaging
Option Available
[1]
AT-32063
Description
The AT-32063 contains two high
performance NPN bipolar transis-
tors in a single SOT-363 package.
The devices are unconnected,
allowing flexibility in design. The
pin-out is convenient for cascode
amplifier designs. The SOT-363
package is an industry standard
plastic surface mount package.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of the transistor yields extremely
high performance products that
can perform a multiplicity of
tasks. The 20 emitter finger
interdigitated geometry yields a
transistor that is easy to match to
and extremely fast, with moderate
power, low noise resistance, and
low operating currents.
Optimized performance at 2.7 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
B
1
1
E
1
2
C
2
3
C
1
6
E
2
5
B
2
4
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 5 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes this device a
good fit for 900 MHz pager appli-
cations. Voltage breakdowns are
high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Agilent’s 10 GHz f
t
, 30
GHz f
max
Self-Aligned-Transistor
(SAT) process. The die are nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metallization
in the fabrication of these devices.
II
相關PDF資料 |
PDF描述 |
|---|---|
| DEMO-ATF-5X1P8 | Demonstration circuit board for ATF-511P8. ATF-521P8 and ATF-531P8 |
| DEMO-HPMD-7904 | Demo board for HPMD-7904 |
| DEMO-HSMP38-XX | Demonstration Circuit Board |
| DEMO-HSMS285-0 | 2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode |
| DEMO-IAM9156-3 | IAM-91563 down-converting mixer demonstration board |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DEMO-ATF-5X1P8 | 制造商:Avago Technologies 功能描述:DEMOBOARD FOR ATF-51/52/531P8 (2G) - Bulk |
| DEMO-BNH | 制造商:IDEC CORPORATION 功能描述:Trmnl Blk Sample Rail |
| DEMOBOARD KIT OSLON SQUARE | 制造商:OSRAM 功能描述: |
| DEMOBOARD PROFET | 功能描述:BOARD DEMO PROFET V2.0BTS RoHS:是 類別:編程器，開發系統 >> 評估演示板和套件 系列:- 產品培訓模塊:Obsolescence Mitigation Program 標準包裝:1 系列:- 主要目的:電源管理，電池充電器 嵌入式:否 已用 IC / 零件:MAX8903A 主要屬性:1 芯鋰離子電池 次要屬性:狀態 LED 已供物品:板 |
| DEMOBOARD TLD7306EK | 制造商:Infineon Technologies AG 功能描述:MC RELAY + LED - Boxed Product (Development Kits) |
發布緊急采購，3分鐘左右您將得到回復。