- 您現在的位置：買賣IC網 > PDF目錄385315 > GS816218BGD-150I (GSI TECHNOLOGY) 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs PDF資料下載
參數資料
| 型號： | GS816218BGD-150I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| 中文描述： | 1M X 18 CACHE SRAM, 7.5 ns, PBGA165 |
| 封裝： | ROHS COMPLIANT, FBGA-165 |
| 文件頁數： | 29/37頁 |
| 文件大小： | 866K |
| 代理商： | GS816218BGD-150I |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁當前第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
Forces all RAM output drivers to High-Z.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
RFU
011
1
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
GSI
101
GSI private instruction.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
RFU
110
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1.
2.
Instruction codes expressed in binary, MSB on left, LSB on right.
Default instruction automatically loaded at power-up and in test-logic-reset state.
GS816218/36B(B/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 9/2005
29/37
2004, GSI Technology
JTAG Port AC Test Conditions
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as shown unless otherwise noted.
Parameter
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DDQ
/2
V
DDQ
/2
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
DQ
V
DDQ
/2
50
30pF
*
JTAG Port AC Test Load
* Distributed Test Jig Capacitance
相關PDF資料 |
PDF描述 |
|---|---|
| GS816218BGD-200 | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816218BGD-200I | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816218BGD-250 | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816218BGD-250I | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS816236BD-150 | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS816218BGD-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 165FPBGA - Trays |
| GS816218BGD-150V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 165FPBGA - Trays |
| GS816218BGD-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays |
| GS816218BGD-200I | 制造商:GSI Technology 功能描述:GS816218BGD-200I - Trays |
| GS816218BGD-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 165FPBGA - Trays |
發布緊急采購，3分鐘左右您將得到回復。