- 您現在的位置：買賣IC網 > PDF目錄385320 > GS8322ZV18B (GSI TECHNOLOGY) 36Mb Pipelined and Flow Through Synchronous NBT SRAM PDF資料下載
參數資料
| 型號： | GS8322ZV18B |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 流水線和流量分配36MB通過同步唑的SRAM |
| 文件頁數： | 16/39頁 |
| 文件大小： | 975K |
| 代理商： | GS8322ZV18B |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁
GS8322ZV18(B/E)/GS8322ZV36(B/E)/GS8322ZV72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03a 2/2006
16/39
2002, GSI Technology
Burst Cycles
Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from
read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address
generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when
driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write
the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into
Load mode.
Burst Order
The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been
accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is Low, a linear burst
sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables
below for details.
FLXDrive
The ZQ pin allows selection between NBT RAM nominal drive strength (ZQ low) for multi-drop bus applications and low drive
strength (ZQ floating or high) point-to-point applications. See the Output Driver Characteristics chart for details.
Mode Pin Functions
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
Linear Burst
H
Interleaved Burst
Output Register Control
FT
L
Flow Through
H or NC
Pipeline
Power Down Control
ZZ
L or NC
Active
H
Standby, I
DD
= I
SB
FLXDrive Output Impedance Control
ZQ
L
High Drive (Low Impedance)
H or NC
Low Drive (High Impedance)
Note:
There are pull-up devices on the ZQ and FT pins and a pull-down devices on the ZZ pin, so those input pins can be unconnected and the chip will
operate in the default states as specified in the above tables.
Linear Burst Sequence
Note:
The burst counter wraps to initial state on the 5th clock.
Interleaved Burst Sequence
Note:
The burst counter wraps to initial state on the 5th clock.
Table 1:
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
4th address
10
11
11
00
00
01
01
10
Table 2:
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
4th address
10
11
11
10
00
01
01
00
Burst Counter Sequences
BPR 1999.05.18
相關PDF資料 |
PDF描述 |
|---|---|
| GS8322ZV18B-133 | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV18B-133I | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV18B-150 | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV18B-150I | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV18B-166 | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8322ZV18B-133 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 8.5NS/4NS 119FBGA - Trays |
| GS8322ZV18B-150 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 8.5NS/3.8NS 119FBGA - Trays |
| GS8322ZV72C-133 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays |
| GS8322ZV72C-150 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays |
| GS8322ZV72C-166 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8NS/3.5NS 209FBGA - Trays |
發布緊急采購，3分鐘左右您將得到回復。