- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385320 > GS8322ZV18GE-200I (GSI TECHNOLOGY) 36Mb Pipelined and Flow Through Synchronous NBT SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | GS8322ZV18GE-200I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 2M X 18 ZBT SRAM, 7.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, LEAD FREE, FPBGA-165 |
| 文件頁(yè)數(shù)： | 17/39頁(yè) |
| 文件大小： | 975K |
| 代理商： | GS8322ZV18GE-200I |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)當(dāng)前第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)
GS8322ZV18(B/E)/GS8322ZV36(B/E)/GS8322ZV72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03a 2/2006
17/39
2002, GSI Technology
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after 2 cycles of wake up time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I
SB
2. The duration of
Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, I
SB
2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing Diagram
tZZR
tZZH
tZZS
tKL
tKH
tKC
CK
ZZ
Designing for Compatibility
The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal. Not
all vendors offer this option, however most mark the pin V
DD
or V
DDQ
on pipelined parts and V
SS
on flow through parts. GSI NBT
SRAMs are fully compatible with these sockets. Other vendors mark the pin as a No Connect (NC). GSI RAMs have an internal
pull-up device on the FT pin so a floating FT pin will result in pipelined operation. If the part being replaced is a pipelined mode
part, the GSI RAM is fully compatible with these sockets. In the unlikely event the part being replaced is a Flow Through device,
the pin will need to be pulled low for correct operation.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8322ZV18GE-225 | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV18GE-225I | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV18GE-250 | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV18GE-250I | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV36B-133 | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8322ZV72C-133 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays |
| GS8322ZV72C-150 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays |
| GS8322ZV72C-166 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8NS/3.5NS 209FBGA - Trays |
| GS8324Z36B-133 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 10NS/4NS 119FBGA - Trays |
| GS8324Z36B-200I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。