- 您現在的位置：買賣IC網 > PDF目錄385342 > GS881Z36T-80 (GSI TECHNOLOGY) 8Mb Pipelined and Flow Through Synchronous NBT SRAMs PDF資料下載
參數資料
| 型號： | GS881Z36T-80 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| 中文描述： | 256K X 36 ZBT SRAM, 14 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數： | 15/34頁 |
| 文件大小： | 542K |
| 代理商： | GS881Z36T-80 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁
Rev: 1.10 8/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
15/34
1998, Giga Semconductor, Inc.
Preliminary
.
GS881Z18/36T-11/100/80/66
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute MaximumRatings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute MaximumRatings, for an extended period of time, may affect reliability of
this component.
Notes:
1.
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V
≤
V
DDQ
≤
2.375 V
(i.e., 2.5 V I/O) and 3.6 V
≤
V
DDQ
≤
3.135 V (i.e., 3.3 V I/O), and quoted at whichever condition is worst case.
This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
DD
+2 V with a pulse width not to exceed 20% tKC.
2.
3.
4.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
T
BIAS
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–0.5 to 4.6
V
–0.5 to V
DD
V
Voltage on Clock Input Pin
–0.5 to 6
V
Voltage on I/O Pins
–0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/–20
mA
Output Current on Any I/O Pin
+/–20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–55 to 125
o
C
Temperature Under Bias
–55 to 125
o
C
Recommended Operating Conditions
Parameter
Symbol
Mn.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
3.135
3.3
3.6
V
I/O Supply Voltage
V
DDQ
2.375
2.5
V
DD
V
1
Input High Voltage
V
IH
1.7
—
V
DD
+0.3
V
2
Input Low Voltage
V
IL
–0.3
—
0.8
V
2
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
3
Ambient Temperature (Industrial Range Versions)
T
A
–40
25
85
°
C
3
相關PDF資料 |
PDF描述 |
|---|---|
| GS881Z36T-80I | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS881Z18T-100 | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS88218AB | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88236AB-150I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88236AB-166 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS881Z36T-80I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS881ZV18BT-250 | 制造商:GSI Technology 功能描述:256K X 36 (9 MEG) NBT, JTAG - Trays |
| GS881ZV18BT-250I | 制造商:GSI Technology 功能描述:256K X 36 (9 MEG) NBT, JTAG - Trays |
| GS881ZV18BT-333 | 制造商:GSI Technology 功能描述:256K X 36 (9 MEG) NBT, JTAG - Trays |
| GS881ZV32BD-250 | 制造商:GSI Technology 功能描述:256K X 32 (8 MEG) NBT, JTAG - Trays |
發布緊急采購，3分鐘左右您將得到回復。