- 您現在的位置：買賣IC網 > PDF目錄360935 > IRFBA34N50C TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 40A I(D) | TO-273AA PDF資料下載
參數資料
| 型號： | IRFBA34N50C |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 40A I(D) | TO-273AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 40A條（丁）|對273AA |
| 文件頁數： | 2/3頁 |
| 文件大小： | 41K |
| 代理商： | IRFBA34N50C |
IRFBA32N50K
2
www.irf.com
PROVISIONAL
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Min. Typ. Max. Units
12
–––
–––
–––
–––
–––
–––
–––
–––
20
–––
60
–––
45
–––
40
–––
5300
–––
–––
540
–––
33
Conditions
V
DS
= 50V, I
D
= 19A
I
D
= 32A
V
DS
= 400V
V
GS
= 10V,
V
DD
= 250V
I
D
= 32A
R
G
= 4.3
V
GS
= 10V,
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
195
75
90
–––
–––
–––
–––
S
nC
–––
–––
pF
Dynamic @ T
J
= 25
°
C (unless otherwise specified)
ns
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
500
–––
–––
0.55
–––
–––
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 19A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
0.14
5.5
50
250
100
-100
V
V/
°
C
V
μA
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Static @ T
J
= 25
°
C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25
°
C, L = 4.3mH, R
G
= 25
,
I
AS
= 32A,
I
SD
≤
32A, di/dt
≤
TBDA/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C
Notes:
Pulse width
≤
400μs; duty cycle
≤
2%.
Symbol
E
AS
I
AR
E
AR
Parameter
Typ.
–––
–––
–––
Max.
760
32
36
Units
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ.
–––
0.50
–––
Max.
0.35
–––
58
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
相關PDF資料 |
PDF描述 |
|---|---|
| IRFBA35N60C | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 35A I(D) | TO-273AA |
| IRFBA32N50K | SMPS MOSFET(開關模式電源MOS場效應管) |
| IRFBC20STRL | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.2A I(D) | TO-263AB |
| IRFBC20STRR | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.2A I(D) | TO-263AB |
| IRFBC30AL | 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFBA35N60C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 35A I(D) | TO-273AA |
| IRFBA90N20 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A) |
| IRFBA90N20D | 制造商:Int'L Rectifier 功能描述:Trans MOSFET N-CH 200V 98A 3-Pin(3+Tab) TO-273AA |
| IRFBA90N20DHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 98A 3-Pin(3+Tab) TO-273AA |
| IRFBA90N20DPBF | 功能描述:MOSFET MOSFT 200V 98A 23mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。