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參數(shù)資料
| 型號： | IRFC1404 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 24K |
| 代理商： | IRFC1404 |
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Mechanical Data
Description
Guaranteed (Min/Max)
40V Min.
2.9m
Max.
2.0V Min., 4.0V Max.
25μA Max.
± 200nA Max.
-55°C to 175°C Max.
Test Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
Storage Temperature Range
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 45A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 40V, V
GS
= 0V, T
J
= 25°C
V
GS
= ±20V
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Relevant Die Mechanical Drawing Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )
100% Al (0.008 mm)
.170" x .230" [ 4.32 mm x 5.84 mm ]
150 mm, with 100 flat
0.356 mm ± 0.025 mm
01-5384
0.109 mm
0.51 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
Recommended Die Attach Conditions:
40V
Size 4.0
R
DS(on)
=0.0029
6" Wafer
10/12/99
Die Outline
Electrical Characteristics (Wafer Form)
IRFC1404
HEXFET
Power MOSFET Die in Wafer Form
S
D
G
www.irf.com
1
PD - 93776
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFC140B | 制造商:Vishay Semiconductors 功能描述:MOSFET N-CHANNEL 100V - Bulk |
| IRFC140R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP |
| IRFC150 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIGH VOLTAGE POWER MOSFET DIE |
| IRFC150R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP |
| IRFC17N50LB | 制造商:Vishay Semiconductors 功能描述:MOSFET N-CHANNEL 500V - Bulk |
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