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參數(shù)資料
| 型號： | IRFR320A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 3.1AI（四）|對252AA |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 117K |
| 代理商： | IRFR320A |
2002 Fairchild Semiconductor Corporation
IRFR320, IRFU320 Rev. B
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
N
1.25
1.05
0.95
0.85
0.75
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.15
80
I
D
= 250
μ
A
160
B
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
750
600
450
300
150
01
2
5
10
2
5
10
2
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
C
ISS
C
OSS
C
RSS
5
4
3
2
1
00
1
2
3
4
5
I
D
, DRAIN CURRENT (A)
g
f
,
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.3
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
0.6
0.9
1.2
100
10
1
0.1
I
S
,
T
J
= 150
o
C
T
J
= 25
o
C
1.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0V
0
4
8
12
16
20
I
D
= 3.1A
Q
G(TOT)
, TOTAL GATE CHARGE (nC)
V
G
,
20
16
12
8
4
0
V
DS
= 200V
V
DS
= 80V
V
DS
= 320V
IRFR320, IRFU320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR320B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET |
| IRFR320BTF | 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR320BTM | 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR320PBF | 功能描述:MOSFET N-Chan 400V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR320TF | 制造商:Samsung Semiconductor 功能描述: |
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