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參數(shù)資料
| 型號： | IRHF9230 |
| 英文描述： | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
| 中文描述： | - 200伏100kRad高可靠性單P溝道MOSFET的工貿(mào)硬化在TO - 205AF包 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 129K |
| 代理商： | IRHF9230 |
IRHF9230
Foot Notes:
Pre-Irradiation
8
www.irf.com
Case Outline and Dimensions — TO-205AF(Modified TO-39)
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 02/03
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = -50V, starting TJ = 25°C, L=21.4mH
Peak IL = -4.0A, VGS =-12V
ISD
≤
-4.0A, di/dt
≤
-150A/
μ
s,
VDD
≤
-200V, TJ
≤
150°C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
-160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
LEGEND
1- SOURCE
2- GATE
3- DRAIN
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