- 您現在的位置：買賣IC網 > PDF目錄360962 > IRHQ593110 100V Quad P-Channel MOSFET in a 28-pin LCC package PDF資料下載
參數資料
| 型號： | IRHQ593110 |
| 英文描述： | 100V Quad P-Channel MOSFET in a 28-pin LCC package |
| 中文描述： | 100V的四P溝道MOSFET的采用28引腳LCC封裝 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | IRHQ593110 |
www.irf.com
3
Pre-Irradiation
IRHQ597110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=5V @V
=10V @V
=15V @V
=20V
Cu
28.0
285 43.0 -100 -100 -100 -70 -60
Br
36.8
305 39.0 -100 -100 -70 - 50 -40
I
59.8
343 32.6 -60 — — — —
LET
Energy Range
V
DS
(V)
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS
V
Cu
Br
I
Table 1. Electrical Characteristics @ Tj = 25
°
C, Post Total Dose Irradiation
(Per Die)
Parameter
100K Rads(Si)
1
300K Rads (Si)
2
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100
—
-100
—
V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
- 2.0 -4.0 - 2.0 -5.0 V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
—
-100
—
-100 nA
I
GSS
Gate-to-Source Leakage Reverse
—
100
—
100
I
DSS
Zero Gate Voltage Drain Current
—
-10
—
-10 μA V
DS
= -80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
—
0.916
—
0.936
V
GS
= -12V, I
D
= -1.8A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
—
0.96
—
0.98
V
GS
= -12V, I
D
= -1.8A
On-State Resistance (LCC-28)
V
SD
Diode Forward Voltage
—
-5.0
—
-5.0 V V
GS
= 0V, IS = -2.8A
Units
Test Conditions
V
GS
= -20V
V
GS
= 20 V
1. Part number IRHQ597110
2. Part number IRHQ593110
相關PDF資料 |
PDF描述 |
|---|---|
| IRHQ6110 | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC |
| IRHQ63110 | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC |
| IRHQ7214 | 250V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package |
| IRHQ8214 | 250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package |
| IRHQ3214 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHQ597110 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 2.8A 28PIN LCC - Rail/Tube |
| IRHQ597110SCS | 制造商:International Rectifier 功能描述:RAD HARD MOSFECT LCC 28 PKG - Rail/Tube |
| IRHQ597110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ6110 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHQ6110SCS | 制造商:International Rectifier 功能描述:100V 3.000A HEXFET RADHARD - Bulk |
發布緊急采購，3分鐘左右您將得到回復。