- 您現在的位置：買賣IC網 > PDF目錄360962 > IRHSNA57Z60 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT PDF資料下載
參數資料
| 型號： | IRHSNA57Z60 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 75A條（丁）|貼片 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 113K |
| 代理商： | IRHSNA57Z60 |
09/06/02
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSNA57Z60
30V, N-CHANNEL
www.irf.com
1
Features:
Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Refer to IRHSLNA57Z60 for Lower Inductance
For footnotes refer to the last page
* Current is limited by package
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Product Summary
Part Number Radiation Level R
DS(on)
Q
G
IRHSNA57Z60 100K Rads (Si) 3.5m
200nC
IRHSNA53Z60 300K Rads (Si) 3.5m
200nC
IRHSNA54Z60 600K Rads (Si) 3.5m
200nC
IRHSNA58Z60 1000K Rads (Si) 4.0m
200nC
Absolute Maximum Ratings
Parameter
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Schottky and Body Diode Avg. Forward Current
75*
Schottky and Body Diode Avg. Forward Current
75*
Opeating and Storage Temperature Range -55 to 150
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
75*
75*
300
250
2.0
±20
500
75
25
W
W/°C
V
mJ
A
mJ
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25°C
IF (AV)@ TC =100°C
TJ, TSTG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
g
Pre-Irradiation
A
A
°C
PD-94237F
相關PDF資料 |
PDF描述 |
|---|---|
| IRHSNA58Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHY3130CM | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA |
| IRHY4130CM | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA |
| IRHY7130CM | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA |
| IRHY8130CM | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHSNA57Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSNA57Z60SCSD | 制造商:International Rectifier 功能描述:IRHSNA57Z60SCSD - Bulk |
| IRHSNA57Z60SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSNA58064 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
| IRHSNA58Z60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
發布緊急采購，3分鐘左右您將得到回復。