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| 型號： | IRKT132-12 |
| 英文描述： | THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|130A I(T) |
| 中文描述： | 晶閘管模塊|可控硅倍增| 1.2KV五（無線資源管理）| 130A條疙（T） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 147K |
| 代理商： | IRKT132-12 |
IRK.170, .230, .250 Series
2
Bulletin I27102 rev. C 05/02
www.irf.com
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
I
T(AV)
Maximum average on-state current
170
230
250
A
180
o
conduction, half sine wave
@ Case temperature
I
T(RMS)
Maximum RMS on -state current
I
TSM
Maximum peak, one-cycle on-state,
non-repetitive surge current
85
377
85
510
85
555
o
C
A
as AC switch
5100
5350
4300
7500
7850
6300
8500
8900
7150
A
t = 10ms
t = 8.3ms reapplied
t = 10ms
No voltage
100% V
RRM
4500
6600
7500
t = 8.3ms reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
131
119
92.5
280
256
198
361
330
255
KA
2
s t = 10ms
t = 8.3ms reapplied
t = 10ms
No voltage
initial T
J
= T
J
max
100% V
RRM
84.4
1310
0.89
181
2800
1.03
233
3610
0.97
t = 8.3ms reapplied
KA
2
√
s t = 0.1 to 10ms, no voltage reapplied
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
m
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
I
TM
=
π
x I
T(AV)
, T
J
= T
J
max., 180
o
conduction
Av. power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
mA
Anode supply=12V, initial I
T
=30A, T
J
=25
o
C
Anode supply=12V, resistive load=1
gate pulse: 10V, 100
μ
s, T
J
= 25°C
I
2
√
t
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
r
t1
r
t2
V
TM
Maximum on-state voltage drop
Maximum I
2
√
t for fusing
1.12
1.07
1.00
Low level on-state slope resistance
1.34
0.77
0.60
High level on-state slope resistance
0.96
0.73
0.57
I
H
I
L
Maximum holding current
500
500
500
Maximum latching current
1000
1000
1000
Type number
Voltage
Code
V
V
, maximum
repetitive peak reverse and
off-state blocking voltage
V
400
800
1200
1400
1600
V
RSM
, maximum non-repetitive
peak reverse voltage
I
RRM
I
max
@ 130°C
V
m A
50
04
08
12
14
16
500
900
1300
1500
1700
IRK.170-
IRK.250-
IRK.230-
08
12
16
18
20
800
1200
1600
1800
2000
900
1300
1700
1900
2100
50
t
d
Typical delay time
1.0
μ
s
T
J
= 25
o
C, Gate Current=1A dI
g/dt
=1A/μs
t
r
Typical rise time
2.0
Vd = 0,67% V
DRM
I
TM
= 300 A ; -dI/dt=15 A/μs; T
J
= T
J
max ;
Vr = 50 V; dV/dt = 20 V/μs ; Gate 0 V, 100 ohm
Voltage Ratings
ELECTRICAL SPECIFICATIONS
On-state Conduction
Switching
t
q
Typical turn-off time
50 - 150
μ
s
1.60
1.59
1.44
V
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
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