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參數資料

型號：	IS42S32400A-7TL
廠商：	INTEGRATED SILICON SOLUTION INC
元件分類：	DRAM
英文描述：	16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述：	4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
封裝：	LEAD FREE, PLASTIC, TSOP2-86
文件頁數：	21/66頁
文件大小：	556K
代理商：	IS42S32400A-7TL

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

ADVANCED INFORMATION

Rev. 00A

06/01/02

ISSI

IS42S81600A, IS42S16800A, IS42S32400A

IS42LS81600A, IS42LS16800A, IS42LS32400A

AC ELECTRICAL CHARACTERISTICS

(1,2,3)

-7

-10

Symbol

Parameter

Min.

Max.

Min.

Max

Units

CK3

CK2

Clock Cycle Time

CAS

Latency = 3

CAS

Latency = 2

—

AC3

AC2

Access Time From CLK

(4)

CAS

Latency = 3

CAS

Latency = 2

—

5.4

—

CHI

CLK HIGH Level Width

2.5

—

3.5

—

CLK LOW Level Width

2.5

—

3.5

—

OH3

OH2

Output Data Hold Time

CAS

Latency = 3

CAS

Latency = 2

2.5

—

2.5

—

Output LOW Impedance Time

—

HZ3

HZ2

Output HIGH Impedance Time

(5)

CAS

Latency = 3

—

CAS

Latency = 2

Input Data Setup Time

1.5

—

2.0

—

Input Data Hold Time

0.8

—

Address Setup Time

—

2.0

—

Address Hold Time

0.8

—

CKS

CKE Setup Time

1.5

—

2.0

—

CKH

CKE Hold Time

0.8

—

CKA

CKE to CLK Recovery Delay Time

1CLK+3

—

1CLK+3

—

Command Setup Time (

RAS

CAS

, DQM)

1.5

—

2.0

—

Command Hold Time (

RAS

CAS

, DQM)

0.8

—

Command Period (REF to REF / ACT to ACT)

—

RAS

Command Period (ACT to PRE)

120,000

Command Period (PRE to ACT)

—

RCD

Active Command To Read / Write Command Delay Time

—

RRD

Command Period (ACT [0] to ACT[1])

—

DPL3

Input Data To Precharge

Command Delay time

CAS

Latency = 3

2CLK

—

2CLK

—

DPL2

CAS

Latency = 2

2CLK

—

2CLK

—

DAL3

Input Data To Active / Refresh

CAS

Latency = 3

Command Delay time (During Auto-Precharge)

CLK+t

—

2CLK+t

—

DAL2

CAS

Latency = 2

2CLK+t

—

2CLK+t

—

Transition Time

0.5

REF

Notes:

1. When power is first applied, memory operation should be started 100 μs after Vdd and Vdd

reach their stipulated voltages.

Also note that the power-on sequence must be executed before starting memory operation.

2. Measured with t

= 1 ns.

3. The reference level is 0.9V when measuring input signal timing. Rise and fall times are measured between V

(min.) and V

(max.).

4. Access time is measured at 0.9V with the load shown in the figure below.

5. The time t

(max.) is defined as the time required for the output voltage to transition by ± 200 mV from V

(min.) or V

(max.)

when the output is in the high impedance state.

Refresh Cycle Time (4096)

—

相關PDF資料	PDF描述
IS61C256AH-8J	x8 SRAM
IS61C256AH-8N	x8 SRAM
IS61C256AH-8T	x8 SRAM
IS61M256-10J	x8 SRAM
IS61M256-10N	x8 SRAM

相關代理商/技術參數	參數描述
IS42S32400A-7TLI	制造商:Integrated Silicon Solution Inc 功能描述:
IS42S32400B	制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-6B	制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 166MHZ 90FBGA
IS42S32400B-6BL	功能描述:動態隨機存取存儲器 128M 4Mx32 166Mhz RoHS:否制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32400B-6BL-TR	功能描述:動態隨機存取存儲器 128M (4Mx32) 166MHz Commercial Temp RoHS:否制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube

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