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參數資料
| 型號： | KM68V1000BLGE-10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| 中文描述： | 128K的× 8位低功耗和低電壓的CMOS Statinc內存 |
| 文件頁數： | 4/10頁 |
| 文件大小： | 183K |
| 代理商： | KM68V1000BLGE-10 |
KM68V1000B, KM68U1000B Family
CMOS SRAM
Revision 2.0
March 1998
CAPACITANCE
1)
(f=1MHz, TA=25
°
C)
1. Capacitance is sampled not, 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
6
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
8
pF
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product : TA=0 to 70
°
C, unless otherwise specified
Extended Product : TA=-25 to 85
°
C, unless otherwise specified
Industrial Product : TA=-40 to 85
°
C, unless otherwise specified
2. Overshoot : V
CC
+3.0V in case of pulse width
≤
30ns
3. Undershoot : -3.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested
Item
Symbol
Product
Min
Typ
3.3
3.0
0
Max
Unit
Supply voltage
Vcc
KM68V1000B Family
KM68U1000B Family
All Family
3.0
2.7
0
3.6
3.3
0
V
Ground
Vss
V
Input high voltage
V
IH
KM68V1000B, KM68U1000B Family
2.2
-
Vcc+0.3
2)
V
Input low voltage
V
IL
KM68V1000B, KM68U1000B Family
-0.3
3)
-
0.4
V
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS
1
=V
IH
or CS
2
=V
IL
or WE=V
IL,
Vio=Vss to Vcc
-1
-
1
Operating power supply current
I
CC
CS
1
=V
IL
,CS
2
=V
IH
,V
IN
=V
IH
or V
IL
, I
IO
=0mA
-
2
5
mA
Average operating current
I
CC1
Cycle time=1
μ
s
,
100% duty, I
IO
=0mA, CS
1
≤
0.2V,
CS
2
≥
V
CC
-0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
-0.2V
-
3
5
mA
I
CC2
Min cycle, 100% duty, I
IO
=0mA, CS
1
=V
IL
, CS
2
=V
IH
-
30
40
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.2
-
-
V
Standby Current(TTL)
I
SB
CS
1
=V
IH,
CS
2
=V
IL
-
-
0.3
mA
Standby
Current
(CMOS)
KM68V1000BL/L-L
I
SB1
CS
1
≥
Vcc-0.2V
CS
2
≥
Vcc-0.2V or CS
2
≤
0.2V
Other input =0~Vcc
Low Power
Low Low Power
-
-
1.0
0.5
50
15
μ
A
KM68V1000BLE/LE-L
KM68V1000BLI/LI-L
Low Power
Low Low Power
-
-
1.0
0.5
100
20
μ
A
KM68U1000BL/L-L
Low Power
Low Low Power
-
-
1.0
0.5
50
15
μ
A
KM68U1000BLE/LE-L
KM68U1000BLI/LI-L
Low Power
Low Low Power
-
-
1.0
0.5
50
15
μ
A
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| KM68V1000BLGE-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLGE-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLGE-7L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLGI-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLGI-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
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