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參數資料
| 型號： | LMC660CN |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | RF CONNECTOR; 75 OHM N MALE, PANEL MOUNT, SOLDER CUP CONTACT |
| 中文描述： | QUAD OP-AMP, 6300 uV OFFSET-MAX, 1.4 MHz BAND WIDTH, PDIP14 |
| 封裝： | DIP-14 |
| 文件頁數： | 3/14頁 |
| 文件大小： | 461K |
| 代理商： | LMC660CN |
Absolute Maximum Ratings
(Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage
Supply Voltage
Output Short Circuit to V
+
Output Short Circuit to V
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Voltage at Input/Output Pins
Current at Output Pin
Current at Input Pin
Current at Power Supply Pin
Power Dissipation
Junction Temperature
ESD tolerance (Note 8)
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
= 25C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
Parameter
Conditions
Typ
(Note 4)
LMC660AMJ/883
±
Supply Voltage
16V
(Note 12)
(Note 1)
260C
65C to +150C
(V
+
) + 0.3V, (V
) 0.3V
±
18 mA
±
5 mA
35 mA
(Note 2)
150C
1000V
Operating Ratings
Temperature Range
LMC660AMJ/883,
LMC660AMD
LMC660AI
LMC660C
LMC660E
Supply Voltage Range
Power Dissipation
Thermal Resistance (
θ
JA
) (Note 11)
14-Pin Ceramic DIP
14-Pin Molded DIP
14-Pin SO
14-Pin Side Brazed
Ceramic DIP
55C
≤
T
J
≤
+125C
40C
≤
T
J
≤
+85C
0C
≤
T
J
≤
+70C
40C
≤
T
J
≤
+125C
4.75V to 15.5V
(Note 10)
90C/W
85C/W
115C/W
90C/W
LMC660AMD
LMC660AI
LMC660C
LMC660E
Units
Limit
Limit
(Note 4)
3
3.3
Limit
(Note 4)
6
6.3
Limit
(Note 4)
6
6.5
(Notes 4, 9)
3
3.5
Input Offset Voltage
1
mV
max
μV/C
Input Offset Voltage
Average Drift
Input Bias Current
1.3
0.002
20
100
20
100
pA
max
pA
max
Tera
dB
min
dB
min
dB
min
V
max
V
min
V/mV
min
V/mV
min
V/mV
min
V/mV
min
4
2
60
Input Offset Current
0.001
2
1
60
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common-Mode
Voltage Range
>
1
83
0V
≤
V
CM
≤
12.0V
V
+
= 15V
5V
≤
V
+
≤
15V
V
O
= 2.5V
0V
≤
V
≤
10V
70
68
70
68
84
82
0.1
0
V
+
2.3
V
+
2.6
400
300
180
70
200
150
100
35
70
68
70
68
84
83
0.1
0
V
+
2.3
V
+
2.5
440
400
180
120
220
200
100
60
63
62
63
62
74
73
0.1
0
V
+
2.3
V
+
2.4
300
200
90
80
150
100
50
40
63
60
63
60
74
70
0.1
0
V
+
2.3
V
+
2.6
200
100
90
40
100
75
50
20
83
94
V
+
= 5V & 15V
For CMRR
≥
50 dB
0.4
V
+
1.9
Large Signal
Voltage Gain
R
L
= 2 k
(Note 5)
Sourcing
Sinking
2000
500
R
L
= 600
(Note 5)
Sourcing
Sinking
1000
250
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| LMC660 | CMOS Quad Operational Amplifier |
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| LMC662AIN | CMOS Dual Operational Amplifier |
| LMC662AMD | CMOS Dual Operational Amplifier |
| LMC662CM | CMOS Dual Operational Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LMC660CN | 制造商:Texas Instruments 功能描述:IC OP AMP QUAD CMOS DIP14 660 |
| LMC660CN/NOPB | 功能描述:運算放大器 - 運放 CMOS Quad Op Amp RoHS:否 制造商:STMicroelectronics 通道數量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LMC660EM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Texas Instruments 功能描述: |
| LMC660EN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| LMC660EP | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:CMOS Quad Operational Amplifier |
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