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參數資料
| 型號： | LMC660EM |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運算放大器 |
| 英文描述： | CMOS Quad Operational Amplifier |
| 中文描述： | QUAD OP-AMP, 6500 uV OFFSET-MAX, 1.4 MHz BAND WIDTH, PDSO14 |
| 封裝： | SO-14 |
| 文件頁數： | 6/14頁 |
| 文件大?。?/td> | 461K |
| 代理商： | LMC660EM |
Typical Performance Characteristics
V
S
=
±
7.5V, T
A
= 25C unless otherwise specified (Continued)
Note:
Avoid resistive loads of less than 500
, as they may cause instability.
Application Hints
Amplifier Topology
The topology chosen for the LMC660, shown in Figure 1 is
unconventional (compared to general-purpose op amps) in
that the traditional unity-gain buffer output stage is not used;
instead, the output is taken directly from the output of the in-
tegrator, to allow rail-to-rail output swing. Since the buffer
traditionally delivers the power to the load, while maintaining
high op amp gain and stability, and must withstand shorts to
either rail, these tasks now fall to the integrator.
As a result of these demands, the integrator is a compound
affair with an embedded gain stage that is doubly fed forward
(via C
and Cff) by a dedicated unity-gain compensation
driver. In addition, the output portion of the integrator is a
push-pull configuration for delivering heavy loads. While
sinking current the whole amplifier path consists of three
gain stages with one stage fed forward, whereas while
sourcing the path contains four gain stages with two fed
forward.
The large signal voltage gain while sourcing is comparable
to traditional bipolar op amps, even with a 600
load. The
gain while sinking is higher than most CMOS op amps, due
to the additional gain stage; however, under heavy load
(600
) the gain will be reduced as indicated in the Electrical
Characteristics.
Compensating Input Capacitance
The high input resistance of the LMC660 op amps allows the
use of large feedback and source resistor values without los-
ing gain accuracy due to loading. However, the circuit will be
especially sensitive to its layout when these large-value re-
sistors are used.
CMRR vs Frequency
DS008767-30
Open-Loop Frequency
Response
DS008767-31
Frequency Response
vs Capacitive Load
DS008767-32
Non-Inverting Large Signal
Pulse Response
DS008767-33
Stability vs
Capacitive Load
DS008767-34
Stability vs
Capacitive Load
DS008767-35
DS008767-4
FIGURE 1. LMC660 Circuit Topology (Each Amplifier)
www.national.com
6
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| LMC660EN | CMOS Quad Operational Amplifier |
| LMC660AIM | RF CONNECTORLFU SURFACE MOUNT JACK, COMPATIBLE WITH U.FL (TM) |
| LMC660AIN | CMOS Quad Operational Amplifier |
| LMC660AMD | CMOS Quad Operational Amplifier |
| LMC660CM | CMOS Quad Operational Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LMC660EN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| LMC660EP | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:CMOS Quad Operational Amplifier |
| LMC662 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:CMOS Dual Operational Amplifier |
| LMC662AIM | 功能描述:運算放大器 - 運放 RoHS:否 制造商:STMicroelectronics 通道數量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LMC662AIM | 制造商:Texas Instruments 功能描述:IC OP AMP DUAL SMD SOIC8 662 |
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