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參數(shù)資料
| 型號(hào)： | LMC662AIN |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運(yùn)算放大器 |
| 英文描述： | CMOS Dual Operational Amplifier |
| 中文描述： | DUAL OP-AMP, 3300 uV OFFSET-MAX, 1.4 MHz BAND WIDTH, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大小： | 430K |
| 代理商： | LMC662AIN |
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Absolute Maximum Ratings
(Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage
Supply Voltage (V
+
V
)
Output Short Circuit to V
+
Output Short Circuit to V
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Voltage at Input/Output Pins
Current at Output Pin
Current at Input Pin
Current at Power Supply Pin
Power Dissipation
Junction Temperature
±
Supply Voltage
16V
(Note 12)
(Note 1)
260C
65C to +150C
(V
+
) +0.3V, (V
) 0.3V
±
18 mA
±
5 mA
35 mA
(Note 2)
150C
ESD Tolerance (Note 8)
1000V
Operating Ratings
(Note 3)
Temperature Range
LMC662AMJ/883,
LMC662AMD
LMC662AI
LMC662C
LMC662E
Supply Voltage Range
Power Dissipation
Thermal Resistance (
θ
JA
) (Note 11)
8-Pin Ceramic DIP
8-Pin Molded DIP
8-Pin SO
8-Pin Side Brazed Ceramic DIP
55C
≤
T
J
≤
+125C
40C
≤
T
J
≤
+85C
0C
≤
T
J
≤
+70C
40C
≤
T
J
≤
+125C
4.75V to 15.5V
(Note 10)
100C/W
101C/W
165C/W
100C/W
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
= 25C.
Boldface
limits apply at the temperature extremes. V
+
= 5V,
V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
1M unless otherwise specified.
Parameter
Conditions
Typ
(Note 4)
LMC662AMJ/883
LMC662AMD
Limit
(Notes 4, 9)
3
3.5
LMC662AI
LMC662C
LMC662E
Units
Limit
(Note 4)
3
3.3
Limit
(Note 4)
6
6.3
Limit
(Note 4)
6
6.5
Input Offset Voltage
1
mV
max
μV/C
Input Offset Voltage
Average Drift
Input Bias Current
1.3
0.002
20
100
20
100
pA
max
pA
max
Tera
dB
min
dB
min
dB
min
V
max
V
min
V/mV
min
V/mV
min
V/mV
min
V/mV
min
4
2
60
Input Offset Current
0.001
2
1
60
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common-Mode
Voltage Range
>
1
83
0V
≤
V
CM
≤
12.0V
V
+
= 15V
5V
≤
V
+
≤
15V
V
O
= 2.5V
0V
≤
V
≤
10V
70
68
70
68
84
82
0.1
0
V
+
2.3
V
+
2.6
400
300
180
70
200
150
100
35
70
68
70
68
84
83
0.1
0
V
+
2.3
V
+
2.5
440
400
180
120
220
200
100
60
63
62
63
62
74
73
0.1
0
V
+
2.3
V
+
2.4
300
200
90
80
150
100
50
40
63
60
63
60
74
70
0.1
0
V
+
2.3
V
+
2.6
200
100
90
40
100
75
50
20
83
94
V
+
= 5V & 15V
For CMRR
≥
50 dB
0.4
V
+
1.9
Large Signal
Voltage Gain
R
L
= 2 k
(Note 5)
Sourcing
Sinking
2000
500
R
L
= 600
(Note 5)
Sourcing
Sinking
1000
250
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LMC662AMD | CMOS Dual Operational Amplifier |
| LMC662CM | CMOS Dual Operational Amplifier |
| LMC662CN | CMOS Dual Operational Amplifier |
| LMC662EM | CMOS Dual Operational Amplifier |
| LMC662EN | CMOS Dual Operational Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMC662AIN | 制造商:Texas Instruments 功能描述:IC OP AMP DUAL CMOS DIP8 662 |
| LMC662AIN/NOPB | 功能描述:運(yùn)算放大器 - 運(yùn)放 CMOS Dual Op Amp RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LMC662AMD | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:CMOS Dual Operational Amplifier |
| LMC662AMJ/883 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:CMOS Dual Operational Amplifier |
| LMC662CM | 功能描述:運(yùn)算放大器 - 運(yùn)放 RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
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