- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358119 > M464S0924CT1-C1L (SAMSUNG SEMICONDUCTOR CO. LTD.) 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD PDF資料下載
參數(shù)資料
| 型號： | M464S0924CT1-C1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 8Mx64 SDRAM內(nèi)存的SODIMM在8M × 16位，4Banks，4K的刷新，3.3V的同步DRAM的社民黨 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 105K |
| 代理商： | M464S0924CT1-C1L |
M464S0924CT1
PC100 SODIMM
Rev. 0.0 April. 2000
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
)
Notes :
Parameter
Symbol
Test Condition
Version
Unit
Not
e
-1H
-1L
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
560
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
4
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
4
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
80
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
28
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
20
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
20
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
120
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
80
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
580
mA
1
Refresh current
I
CC5
840
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
C
6
mA
L
3.2
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M464S0924CT1-L1H | 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924CT1 | 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M4M40 | 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR |
| M50-00000S045 | 6 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT |
| M50-00000S046 | 6 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M464S0924CT1-L1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924CT1-L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924DTS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924DTS-C1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924DTS-C1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。