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參數資料
| 型號： | M464S0924CT1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 8Mx64 SDRAM內存的SODIMM在8M × 16位，4Banks，4K的刷新，3.3V的同步DRAM的社民黨 |
| 文件頁數： | 4/9頁 |
| 文件大小： | 105K |
| 代理商： | M464S0924CT1 |
M464S0924CT1
PC100 SODIMM
Rev. 0.0 April. 2000
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
4
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
3.0
3.3
3.6
V
Input high voltage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input low voltage
V
IL
-0.3
0
0.8
V
2
Output high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-10
-
10
uA
3
1. V
IH
(max) = 5.6V AC.The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
= 1.4V
±
200
mV)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A
0
~ A
11
, BA0 ~ BA1)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0)
Input capacitance (CS0)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
OUT
15
15
15
15
15
10
10
25
25
25
21
25
12
12
pF
pF
pF
pF
pF
pF
pF
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相關代理商/技術參數 |
參數描述 |
|---|---|
| M464S0924CT1-C1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924CT1-C1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924CT1-L1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924CT1-L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924DTS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
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