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參數資料
| 型號： | MH32S72BBFA-8 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to +105 C; Capacitance:880uF |
| 中文描述： | 2415919104位（33554432 - Word的72位）同步動態隨機存儲器 |
| 文件頁數： | 1/56頁 |
| 文件大小： | 917K |
| 代理商： | MH32S72BBFA-8 |
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2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72AQJA-7, -8
17/Mar./2000
MIT-DS-0371-0.2
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
DESCRIPTION
APPLICATION
Main memory unit for computers, Microcomputer memory.
1
1pin
10pin
11pin
40pin
41pin
84pin
85pin
94pin
95pin
124pin
125pin
168pin
The MH32S72AQJA is 33554432 - word x 72-bit
Synchronous DRAM module. This consist of eighteen
industry standard 32M x 4 Synchronous DRAMs in
TSOP.
The TSOP on a card edge dual in-line package provides
any application where high densities and large of
quantities memory are required.
This is a socket-ty pe memory module ,suitable for
easy interchange or addition of module.
FEATURES
6ns (CL = 2)
-7
Utilizes industry standard 32M X 4 Synchronous DRAMs in
TSOP package , industry standard Resistered buffer in TSSOP
package and industry standard PLL in TSSOP package
Single 3.3V +/- 0.3V supply
LVTTL Interface
Burst length 1/2/4/8/Full Page(programmable)
Burst W rite / Single W rite(programmable)
Auto precharge / All bank precharge controlled by A10
Auto refresh and Self refresh
4096 refresh cycles every 64ms
Max.
Frequency
CLK
Access Time
[component level]
100MHz
Discrete IC and module design conform to
PC/100 specification.
(module Spec. Rev. 1.2 and SPD 1.2A)
6ns (CL = 3)
-8
100MHz
相關PDF資料 |
PDF描述 |
|---|---|
| MH32S72DBFA-6 | Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to +105 C; Capacitance:8800uF |
| MH32S72DBFA-7 | Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:10VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to +105 C; Capacitance:990uF RoHS Compliant: Yes |
| MH32S72DBFA-8 | 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72VJA-6 | 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32V7245BST-5 | HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MH32S72DBFA-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72DBFA-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72DBFA-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72PHB-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2415919104-BIT (33554432 - WORD BY 72-BIT)SynchronousDRAM |
| MH32S72PHB-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
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