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參數資料
| 型號： | MH32S72DBFA-6 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to +105 C; Capacitance:8800uF |
| 中文描述： | 2415919104位（33554432 - Word的72位）同步動態隨機存儲器 |
| 文件頁數： | 10/56頁 |
| 文件大小： | 917K |
| 代理商： | MH32S72DBFA-6 |
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2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72AQJA-7, -8
17/Mar./2000
MIT-DS-0371-0.2
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
10
FUNCTION TRUTH TABLE
(continued)
Current State
/S
/RAS
/CAS
/WE
Address
Command
Action
RE-
H
X
X
X
X
DESEL
NOP(Idle after tRC)
FRESHING
L
H
H
H
X
NOP
NOP(Idle after tRC)
L
H
H
L
BA
TBST
ILLEGAL
L
H
L
X
BA,CA,A10
READ/WRITE ILLEGAL
L
L
H
H
BA,RA
ACT
ILLEGAL
L
L
H
L
BA,A10
PRE/PREA
ILLEGAL
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
MODE
H
X
X
X
X
DESEL
NOP(Idle after tRSC)
REGISTER
L
H
H
H
X
NOP
NOP(Idle after tRSC)
SETTING
L
H
H
L
BA
TBST
ILLEGAL
L
H
L
X
BA,CA,A10
READ/WRITE ILLEGAL
L
L
H
H
BA,RA
ACT
ILLEGAL
L
L
H
L
BA,A10
PRE/PREA
ILLEGAL
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
ABBREVIATIONS:
H = Hige Level, L = Low Level, X = Don't Care
BA = Bank Address, RA = Row Address, CA = Column Address, NOP = No Operation
NOTES:
1. All entries assume that CKE was High during the preceding clock cycle and the current
clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA,
depending on the state of that bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state.May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
ILLEGAL = Device operation and / or date-integrity are not guaranteed.
相關PDF資料 |
PDF描述 |
|---|---|
| MH32S72DBFA-7 | Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:10VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to +105 C; Capacitance:990uF RoHS Compliant: Yes |
| MH32S72DBFA-8 | 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72VJA-6 | 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32V7245BST-5 | HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM |
| MH32V7245BST-6 | HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MH32S72DBFA-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72DBFA-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72PHB-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2415919104-BIT (33554432 - WORD BY 72-BIT)SynchronousDRAM |
| MH32S72PHB-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72PHB-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2415919104-BIT (33554432 - WORD BY 72-BIT)SynchronousDRAM |
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