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參數(shù)資料
| 型號： | MTP2955D |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
| 中文描述： | TMOS是功率場效應晶體管60伏12安培的RDS（on）\u003d 0.230歐姆 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 116K |
| 代理商： | MTP2955D |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
0
1
2
3
4
5
0
15
25
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2
4
6
8
10
0
9
18
24
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
3
6
15
24
0
0.10
0.20
0.30
R
0
6
21
24
0.050
0.075
0.200
0.250
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.2
1.6
0
20
50
60
10
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
– 25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
≥
10 V
TJ = – 55
°
C
25
°
C
100
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
ID = 6 A
9 V
8 V
6 V
5 V
7 V
5
10
20
3
5
7
9
3
12
21
VGS = 10 V
TJ = 100
°
C
25
°
C
– 55
°
C
12
21
3
12
15
10
30
40
0.05
0.15
0.25
0.100
0.225
0.125
1.0
1.4
TJ = 125
°
C
VGS = 10 V
15 V
175
6
7
8
9
10
15
6
18
9
0.35
0.40
0.175
9
18
0.150
0.4
0.2
0
1.8
2.0
100
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| MTP29N15E | TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM |
| MTP2N40E | TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
| MTP2N50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
| MTP2N60 | TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| MTP2N60E | TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTP2955E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM |
| MTP2955V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP2955V_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP29N15E | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 29 Amps, 150 Volts N-Channel TO-220 |
| MTP2H-E10-C | 功能描述:電纜束帶 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強度: |
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