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參數(shù)資料
| 型號： | MTP3055E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET |
| 中文描述： | ? -通道60V的- 0.1ohm - 12A條，220 STripFET MOSFET的 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 160K |
| 代理商： | MTP3055E |
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Motorola TMOS Power MOSFET Transistor Device Data
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP3055V | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM |
| MTP3055VL | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM |
| MTP3055VL | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| MTP30N06VL | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM |
| MTP30P06V | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP3055EL | 制造商:ON Semiconductor 功能描述:TMOS IV N-CHANNEL ENHANCEMENT-MODE |
| MTP3055V | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP3055V | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| MTP3055V_L86Z | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP3055VL | 功能描述:MOSFET 60V Single N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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