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參數資料
| 型號： | MTP3N120E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM |
| 中文描述： | 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 1/8頁 |
| 文件大小： | 252K |
| 代理商： | MTP3N120E |
1
Motorola, Inc. 1995
N–Channel Enhancement–Mode Silicon Gate
This advanced high–voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls, and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Capability Specified at Elevated
Temperature
Low Stored Gate Charge for Efficient Switching
Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor Absorbs High Energy in the
Avalanche Mode
Source–to–Drain Diode Recovery Time Comparable to
Discrete Fast Recovery Diode
*
See App. Note AN1327 — Very Wide Input Voltage Range;
Off–line Flyback Switching Power Supply
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
1200
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
50 ms)
1200
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous @ 25
°
C
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
3.0
2.2
11
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
125
1.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°
C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
(TJ
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc, PEAK IL = 4.5 Apk, L = 10 mH, RG = 25
)
150
°
C)
EAS
101
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
1.0
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
TL
260
°
C
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP3N120E/D
TMOS POWER FET
3.0 AMPERES
1200 VOLTS
RDS(on) = 5.0 OHM
Motorola Preferred Device
D
S
G
CASE 221A–06, Style 5
TO–220AB
相關PDF資料 |
PDF描述 |
|---|---|
| MTP3N25E | TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
| MTP3N50E | TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
| MTP3N50 | TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
| MTP3N60E | TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS |
| MTP40N10E | CONNECTOR ACCESSORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MTP3N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
| MTP3N35 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 350-400 V |
| MTP3N40 | 制造商:n/a 功能描述:3N40 S8H2A |
| MTP3N50 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
| MTP3N50E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB 制造商:UNBRANDED 功能描述:MOSFET, N TO-220 |
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