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參數(shù)資料
| 型號： | MTP3N50E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
| 中文描述： | 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 251K |
| 代理商： | MTP3N50E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 0.25 mA)
V(BR)DSS
500
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 500 V, VGS = 0)
(VDS = 400 V, VGS = 0, TJ = 125
°
C)
IDSS
—
—
—
—
0.25
1.0
mAdc
Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSF
IGSSR
—
—
100
nAdc
—
—
100
nAdc
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
(TJ = 125
°
C)
VGS(th)
2.0
1.5
—
—
4.0
3.5
Vdc
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 A)
(ID = 1.5 A, TJ = 100
°
C)
RDS(on)
VDS(on)
—
2.4
3.0
Ohm
—
—
—
—
10
8.0
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc)
gFS
1.0
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
—
435
—
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
—
56
—
Transfer Capacitance
Crss
—
9.2
—
SWITCHING CHARACTERISTICS*
Turn–On Delay Time
3.0 A,
VGS(on) = 10 V)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
14
—
ns
Rise Time
(VDD = 250 V, ID
≈
RG = 18
, RL = 83
,
—
14
—
Turn–Off Delay Time
—
30
—
Fall Time
—
20
—
Total Gate Charge
VGS = 10 V)
—
15
21
nC
Gate–Source Charge
(VDS = 400 V, ID = 3.0 A,
—
2.5
—
Gate–Drain Charge
—
10
—
SOURCE–DRAIN DIODE CHARACTERISTICS*
Forward On–Voltage
(IS = 3.0 A)
VSD
ton
trr
—
—
1.5
Vdc
Forward Turn–On Time
(IS = 3.0 A, di/dt = 100 A/
μ
s)
—
**
—
ns
Reverse Recovery Time
—
200
—
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
Ld
—
—
3.5
4.5
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
Ls
—
7.5
—
*Indicates Pulse Test: Pulse Width = 300
μ
s Max, Duty Cycle
≤
2.0%.
**Limited by circuit inductance.
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PDF描述 |
|---|---|
| MTP3N50 | TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
| MTP3N60E | TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS |
| MTP40N10E | CONNECTOR ACCESSORY |
| MTP4N40E | TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM |
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參數(shù)描述 |
|---|---|
| MTP3N55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH VOLTAGE POWER MOSFET N-CHANNEL |
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| MTP3NA60 | 制造商:STMicroelectronics 功能描述:3NA60 |
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