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參數(shù)資料
| 型號(hào)： | MTP50N06 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| 中文描述： | TMOS是功率場(chǎng)效應(yīng)晶體管60伏42安培的RDS（on）\u003d 0.028歐姆 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 179K |
| 代理商： | MTP50N06 |
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Motorola TMOS Power MOSFET Transistor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE/Locations Not Listed
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P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
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: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP50N06EL | TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| MTP50N06V | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| MTP50N06VL | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM |
| MTP52N06VL | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM |
| MTP52N06V | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP50N06EL | 制造商:ON Semiconductor 功能描述: |
| MTP50N06V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP50N06V_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP50N06VL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(3+Tab) TO-220AB Rail |
| MTP50P03HDL | 功能描述:MOSFET 30V 50A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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