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參數資料
| 型號： | NSI50350AST3G |
| 廠商： | ON Semiconductor |
| 文件頁數： | 2/7頁 |
| 文件大小： | 195K |
| 描述： | IC REG/LED DRIVER 350MA SMC |
| 標準包裝： | 1 |
| 功能： | * |
| 檢測方法： | * |
| 精確度： | * |
| 輸入電壓： | * |
| 電流 - 輸出： | * |
| 工作溫度： | * |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | DO-214AB，SMC |
| 供應商設備封裝： | SMC |
| 包裝： | 標準包裝 |
| 其它名稱： | NSI50350AST3GOSDKR |
NSI50350AST3G
http://onsemi.com
2
MAXIMUM RATINGS (T
A
= 25癈 unless otherwise noted)
Rating
Symbol
Value
Unit
AnodeCathode Voltage
Vak Max
50
V
Reverse Voltage
V
R
500
mV
Operating and Storage Junction Temperature Range
T
J
, T
stg
55 to +175
癈
ESD Rating: Human Body Model
Machine Model
ESD
Class 3B (8000 V)
Class C (400 V)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T
A
= 25癈 unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Steady State Current @ Vak = 7.5 V (Note 1)
I
reg(SS)
315
350
385
mA
Voltage Overhead (Note 2)
V
overhead
1.8
V
Pulse Current @ Vak = 7.5 V (Note 3)
I
reg(P)
405.5
460
516.5
mA
1. I
reg(SS)
steady state is the voltage (Vak) applied for a time duration e 300 sec, using 900 mm
2
DENKA K1, 1.5 mm Al, 2kV Thermally
conductive dielectric, 2 oz. Cu (or equivalent), in still air.
2. V
overhead
= V
in
V
LEDs
. V
overhead
is typical value for 70% I
reg(SS)
.
3. I
reg(P)
nonrepetitive pulse test. Pulse width t d 360 msec.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 4) T
A
= 25癈
Derate above 25癈
P
D
3112
20.75
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 4)
R
?SPAN class="pst NSI50350AST3G_2645222_5">JA
48.2
癈/W
Thermal Reference, JunctiontoTab (Note 4)
R
?SPAN class="pst NSI50350AST3G_2645222_5">JL
8.7
癈/W
Total Device Dissipation (Note 5) T
A
= 25癈
Derate above 25癈
P
D
4225
28.17
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 5)
R
?SPAN class="pst NSI50350AST3G_2645222_5">JA
35.5
癈/W
Thermal Reference, JunctiontoTab (Note 5)
R
?/DIV>
JL
8.0
癈/W
Total Device Dissipation (Note 6) T
A
= 25癈
Derate above 25癈
P
D
5119
34.13
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 6)
R
?SPAN class="pst NSI50350AST3G_2645222_5">JA
29.3
癈/W
Thermal Reference, JunctiontoTab (Note 6)
R
?/DIV>
JL
7.2
癈/W
Total Device Dissipation (Note 7) T
A
= 25癈
Derate above 25癈
P
D
5859
39.06
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 7)
R
?SPAN class="pst NSI50350AST3G_2645222_5">JA
25.6
癈/W
Thermal Reference, JunctiontoTab (Note 7)
R
?/DIV>
JL
6.9
癈/W
Total Device Dissipation (Note 8) T
A
= 25癈
Derate above 25癈
P
D
3061
20.41
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 8)
R
?SPAN class="pst NSI50350AST3G_2645222_5">JA
49
癈/W
Thermal Reference, JunctiontoTab (Note 8)
R
?SPAN class="pst NSI50350AST3G_2645222_5">JL
15.1
癈/W
NOTE: Lead measurements are made by noncontact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher 癈/W values based upon empirical
measurements and method of attachment.
4. 400 mm
2
, see below PCB description, still air.
5. 900 mm
2
, see below PCB description, still air.
6. 1600 mm
2
, see below PCB description, still air.
7. 2500 mm
2
, see below PCB description, still air.
(For NOTES 47: PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent).
8. 1000 mm
2
, FR4, 3 oz Cu, still air.
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