HGTG10N120BND Fairchild代理35A 1200V NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG10N120BND 深圳市亨力拓電子有限公司貨源電話：0755-83293082 阮先生

HGTG10N120BND Fairchild代理35A 1200V NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 大批量到貨

HGTG10N120BND Fairchild代理35A 1200V NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

35A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This devICe
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor. The IGBT used
is the development type TA49290. The Diode used is the
development type TA49189.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49302.

Features
? 35A, 1200V, TC = 25oC
? 1200V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . .  140ns at TJ = 150oC
? Short Circuit Rating
? Low Conduction Loss