Notes

1. Values measured at 22°C (72°F) unless noted with 3000 ohm resistors completing the bridge.
2. Pressure sensor performance can be affected by die mounting. Packaging stress should be minimized to achieve the specified performance.
3. Proof Pressure: The maximum pressure at which the sensor may be subjected as an uncommon event and for a short duration of time without permanent damage or performance degradation. If the Proof Pressure is exceeded, the die performance is no longer guaranteed.
4. Burst Pressure: The pressure at which permanent damage to the sensor may occur. Specification is for quasi-static pressure in an oil medium applied to the diaphragm side of the die.
5. Parameter is measured at the wafer-level 100% at room temperature, atmospheric pressure and 3V.
6. Symmetry is calculated as 2*(r1 – r2)/(r1 + r2), where r1 and r2 are two piezoresistors measured separately.
7. Parameters marked “Typical” are verified by testing samples from each wafer. TCR of sensor resistors only. TCR of bridge circuit will be affected by the resistor values completing the bridge.
8. Die is capable beyond this range with additional validation.
9. Die with protective layers has been successfully used in various medical and biological applications.
10. If the sensor is to be exposed to radiation, it is recommended to shield the die from radiation and implement auto-zeroing.