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參數資料
| 型號： | TP0202T-T1 |
| 英文描述： | TRANSISTOR SOT23 SMD MOSFET |
| 中文描述： | 晶體管SOT23封裝貼片MOSFET的 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | TP0202T-T1 |
TP0202T
2
Siliconix
S-44505—Rev. E, 06-Sep-94
Specifications
a
Limits
Parameter
Symbol
Test Conditions
Min
Typ
b
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –10 A
–20
–25
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –0.25 mA
–1.3
–2.1
–3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –16 V, V
GS
= 0 V
–1
A
T
J
=
–10
On-State Drain Current
c
I
D(on)
V
DS
= –10 V, V
GS
= –10 V
–0.5
–0.75
A
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= –4.5 V, I
D
= –0.05 A
1.7
3.5
V
GS
= –10 V, I
D
= –0.2 A
0.9
1.4
Forward Transconductance
c
g
fs
V
DS
= –10 V, I
D
= –0.2 A
250
600
mS
Diode Forward Voltage
V
SD
I
S
= –0.25 A, V
GS
= 0 V
–0.9
–1.5
V
Dynamic
Total Gate Charge
Q
g
2700
Gate-Source Charge
Q
gs
V
DS
–16 V, V
GS
=–10 V, I
D
–200 mA
500
pC
Gate-Drain Charge
Q
gd
600
Input Capacitance
C
iss
55
Output Capacitance
C
oss
V
DS
= –15 V, V
GS
= 0 V, f = 1 MHz
50
pF
Reverse Transfer Capacitance
C
rss
18
Switching
d
Turn-On Time
t
d(on)
8
12
t
r
–15
–0.2
20
30
ns
Turn-Off Time
t
d(off)
20
35
t
f
30
40
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPBP02
2%.
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