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參數資料
| 型號： | W29C020P-12B |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 256K X 8 CMOS FLASH MEMORY |
| 中文描述： | 256K X 8 FLASH 5V PROM, 120 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數： | 10/21頁 |
| 文件大小： | 267K |
| 代理商： | W29C020P-12B |
W29C020
- 10 -
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to V
SS
Potential
Operating Temperature
-0.5 to +7.0
0 to +70
V
°
C
°
C
V
V
V
Storage Temperature
-65 to +150
D.C. Voltage on Any Pin to Ground Potential Except A9
Transient Voltage (<20 nS ) on Any Pin to Ground Potential
-0.5 to V
DD
+1.0
-1.0 to V
DD
+1.0
-0.5 to 12.5
Voltage on A9 and OE Pin to Ground Potential
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(V
DD
= 5.0V
±
10
%
, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN.
TYP.
MAX.
Power Supply Current
I
CC
CE = OE = V
IL
, WE = V
IH
,
all DQs open
Address inputs = V
IL
/V
IH
,
at f = 5 MHz
-
-
50
mA
Standby V
DD
Current
(TTL input)
I
SB
1
CE = V
IH
, all DQs open
Other inputs = V
IL
/V
IH
-
2
3
mA
Standby V
DD
Current
(CMOS input)
I
SB
2
CE = V
DD
-0.3V, all DQs
open
-
20
100
μ
A
Input Leakage Current
I
LI
V
IN
= GND to V
DD
-
-
10
μ
A
Output Leakage Current
I
LO
V
IN
= GND to V
DD
-
-
10
μ
A
Input Low Voltage
V
IL
-
-
-
0.8
V
Input High Voltage
V
IH
-
2.0
-
-
V
Output Low Voltage
V
OL
I
OL
= 2.0 mA
-
-
0.45
V
Output High Voltage
V
OH1
I
OH
= -400
μ
A
2.4
-
-
V
Output High Voltage
CMOS
V
OH2
I
OH
= -100
μ
A; V
CC
= 4.5V
4.2
-
-
V
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相關代理商/技術參數 |
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| W29C020P-70 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W29C020P-70A | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W29C020P-70B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W29C020P-90 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W29C020P-90A | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
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