
W39V040B
Publication Release Date: April 14, 2005
- 3 -
Revision A3
1. GENERAL DESCRIPTION
The W39V040B is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K
×
8 bits. For
flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The device
can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is
required for accelerated program. The unique cell architecture of the W39V040B results in fast
program/erase operations with extremely low current consumption. This device can operate at two
modes, Programmer bus interface mode, Low pin count (LPC) bus interface mode. As in the
Programmer interface mode, it acts like the traditional flash but with a multiplexed address inputs. But
in the LPC interface mode, this device complies with the Intel LPC specification. The device can also be
programmed and erased using standard EPROM programmers.
2. FEATURES
Single 3.3-volt operations:
3.3-volt Read
3.3-volt Erase
3.3-volt Program
Fast Program operation:
Byte-by-Byte programming: 9
μ
S (typ.)
(V
PP
= 12V)
Byte-by-Byte programming: 12
μ
S (typ.)
(V
PP
= Vcc)
Fast Erase operation:
Sector erase 0.6 Sec. (typ.)
Fast Read access time: Tkq 11 nS
Endurance: 10K cycles (typ.)
Twenty-year data retention
8 Even sectors with 64K bytes
Any individual sector can be erased
Hardware protection:
#TBL supports 64-Kbyte Boot Block
hardware protection
#WP supports the whole chip except Boot
Block hardware protection
Low power consumption
Active current: 15 mA (typ. for LPC read
mode)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
Available packages: 32L PLCC, 32L STSOP
32L PLCC Lead free, 32L STSOP Lead free