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參數(shù)資料
| 型號(hào)： | W981208BH-8H |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | x8 SDRAM |
| 中文描述： | 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁(yè)數(shù)： | 8/44頁(yè) |
| 文件大小： | 2177K |
| 代理商： | W981208BH-8H |
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W981208AH
4M x 8 bit x 4 Banks SDRAM
Revision 1.0 Publication Release Date: March, 1999
- 8 -
NOTES:
1.
Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the devices.
2.
All voltages are referenced to V
SS
3.
These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of
tCK and tRC.
4.
These parameters depend on the output loading conditions. Specified values are obtained with output open.
5.
Power up sequence is further described in the "Functional Description" section.
6.
AC TESTING CONDITIONS
Output Reference Level
Output Load
Input Signal Levels
Transition Time (Rise and Fall) of Input Signal
Input Reference Level
1.4V/1.4V
See diagram B below
2.4V/0.4V
2ns
1.4V
50 ohms
1.4 V
AC TEST LOAD (B)
Z = 50 ohms
output
AC TEST LOAD (A)
1.2K
0.87K
output
3.3 V
50pF
50pF
7.
Transition times are measured between V
IH
and V
IL
.
8.
t
HZ
defines the time at which the outputs achieve the open circuit condition and is not referenced to output level.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W981216 | 2M x 16 bit x 4 Banks SDRAM |
| W981216AH | 2M x 16 bit x 4 Banks SDRAM |
| W981216BH | 2M x 4 BANKS x 16 BIT SDRAM |
| W981216AH-75 | x16 SDRAM |
| W981216AH-8H | x16 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W981216 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M x 16 bit x 4 Banks SDRAM |
| W981216AH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M x 16 bit x 4 Banks SDRAM |
| W981216AH-75 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM |
| W981216AH-8H | 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM |
| W981216BH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M x 4 BANKS x 16 BIT SDRAM |
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