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參數(shù)資料
| 型號： | WF256K16-50CC5 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 5V FLASH MODULE |
| 中文描述： | 5V的閃存模塊 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 201K |
| 代理商： | WF256K16-50CC5 |
2
White Microelectronics Phoenix, AZ (602) 437-1520
7
F
WF128K16, WF256K16-XCX5
ABSOLUTE MAXIMUM RATINGS (1)
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot V
SS
to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is V
CC
+ 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A
9
pin is -0.5V. During voltage transitions, A
9
may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A
9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
CAPACITANCE
(T
A
= 25
°
C)
DC CHARACTERISTICS - CMOS COMPATIBLE
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Operating Temperature
Supply Voltage Range (V
CC
)
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
Endurance (write/erase cycles) Mil Temp
A
9
Voltage for sector protect (V
ID
) (3)
Unit
°
C
V
V
°
C
°
C
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
10 years
10,000 cycles min.
-2.0 to +14.0
V
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
Parameter
Symbol
Conditions
128K x 16
Min
256K x 16
Min
Unit
Max
10
10
70
Max
10
10
80
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read
(1)
I
LI
I
LO
I
CC1
V
CC
= 5.5, V
IN
= GND to V
CC
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IL
, OE = V
IH
μ
A
μ
A
mA
V
CC
Active Current for Program
or Erase
(2)
I
CC2
CS = V
IL
, OE = V
IH
100
110
mA
V
CC
Standby Current
Output Low Voltage
Output High Voltage
Output High Voltage
Low V
CC
Lock Out Voltage
I
CC3
V
OL
V
OH1
V
OH2
V
LKO
V
CC
= 5.5, CS = V
IH
, f = 5MHz
I
OL
= 12.0 mA, V
CC
= 4.5
I
OH
= -2.5 mA, V
CC
= 4.5
I
OH
= -100
μ
A, V
CC
= 4.5
6
8
mA
V
V
V
V
0.45
0.45
0.85xVcc
V
CC
-0.4
3.2
0.85xVcc
V
CC -0.4
3.2
Test
OE capacitance
WE capacitance
CS capacitance
I/O
0-7
capacitance
Symbol
C
OE
C
WE
C
CS
C
I/O
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
50
pF
Max
50
50
30
30
Unit
pF
pF
pF
pF
Address capacitance
C
AD
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A
9
Voltage for Sector Protect
Symbol
V
CC
V
IH
V
IL
T
A
T
A
V
ID
Min
4.5
2.0
-0.5
-55
-40
11.5
Max
5.5
Unit
V
V
V
°
C
°
C
V
V
CC
+ 0.3
+0.8
+125
+85
12.5
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