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參數(shù)資料
| 型號： | 15C01SS |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Low-Frequency General-Purpose Amplifier Applications |
| 中文描述： | 低頻通用放大器應用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 28K |
| 代理商： | 15C01SS |
15C01SS
No.7508-1/4
NPN Epitaxial Planar Silicon Transistor
Applications
Low-frequency Amplifier, muting circuit.
Features
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE (sat) typ.=0.58
[IC=0.7A, IB=35mA].
Ultrasmall, slim flat-lead package
(1.4mm
0.8mm
0.6mm).
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
mA
A
mW
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
20
15
5
600
1.2
200
150
Mounted on a glass epoxy board (20
30
1.6mm)
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Marking : YP
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=15V, IE=0
VEB=4V, IC=0
VCE=2V, IC=10mA
VCE=2V, IC=50mA
VCB=10V, f=1MHz
IC=200mA, IB=10mA
IC=200mA, IB=10mA
0.1
0.1
800
μ
A
μ
A
300
330
3.2
150
0.9
MHz
pF
mV
V
300
1.2
Continued on next page.
Ordering number : ENN7508
15C01SS
O3003 TS IM TA-100251
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2159A
[15C01SS]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
0
0.25
0.2
0
0
1.4
0.45
1
3
2
0
0
1
0
0.1
1
3
2
Top View
Side View
Side View
Bottom View
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 15C01SS_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amplifier Applications |
| 15C01SS-TL-E | 功能描述:兩極晶體管 - BJT BIP NPN 0.6A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 15C02CH | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| 15C02CH-TL-E | 功能描述:兩極晶體管 - BJT BIP NPN 1A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 15C02MH | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amplifier Applications |
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