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| 型號： | GS8642Z72GC-300 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 1M X 72 ZBT SRAM, 5.5 ns, PBGA209 |
| 封裝： | 22 X 14 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209 |
| 文件頁數(shù)： | 17/34頁 |
| 文件大?。?/td> | 872K |
| 代理商： | GS8642Z72GC-300 |
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GS8642Z18(B)/GS8642Z36(B)/GS8642Z72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 5/2005
17/34
2004, GSI Technology
20% tKC
V
SS
–
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
C
IN
V
IN
= 0 V
4
5
pF
Input/Output Capacitance
C
I/O
V
OUT
= 0 V
6
7
pF
Note:
These parameters are sample tested.
AC Test Conditions
Parameter
Conditions
Input high level
V
DD
– 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
V
DDQ
/2
Output reference level
V
DDQ
/2
Output load
Fig. 1
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
3.
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
= 2.5 V)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8642Z72GC-300I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 72MBIT 1MX72 5.5NS/3NS 209FBGA - Trays |
| GS8642Z72GC-300IV | 制造商:GSI Technology 功能描述:72MB S/DCD SYNCH BURST SRAM - Bulk |
| GS8642Z72GC-300V | 制造商:GSI Technology 功能描述:72MB S/DCD SYNCH BURST SRAM - Bulk |
| GS8642ZV18B | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8642ZV18B-167 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
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