- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360926 > IRF1405STRL TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 131A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF1405STRL |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 131A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 131A章一（d）|對(duì)263AB |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 181K |
| 代理商： | IRF1405STRL |
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.11mH
R
G
= 25
, I
AS
= 75A, V
GS
=10V. Part not
recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
40
–––
–––
2.0
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.033
–––
2.7
3.7
–––
4.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
100
150
31
–––
42
–––
18
–––
110
–––
36
–––
58
–––
4.5
–––
V
V/°C
m
V
V
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
Between lead,
nH
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
4340
1030
550
3300
920
1350
–––
–––
–––
–––
–––
–––
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Min.
–––
Typ. Max. Units
–––
75
A
–––
–––
750
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
28
34
1.3
42
51
V
ns
nC
V
DS
= 25V, I
D
= 75A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
I
D
= 75A
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 75A
R
G
= 3.0
Conditions
V
GS
= 10V
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 25V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 250μA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF1405STRR | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 131A I(D) | TO-263AB |
| IRF1503L | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 190A I(D) | TO-262AA |
| IRF151CHIP | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | CHIP |
| IRF1520G | |
| IRF15210 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 23A I(D) | TO-220FP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF1405STRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 131A 3PIN D2PAK - Tape and Reel |
| IRF1405STRLPBF | 功能描述:MOSFET MOSFT 55V 131A 5.3mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1405STRR | 功能描述:MOSFET N-CH 55V 131A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF1405STRRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK T/R |
| IRF1405STRRPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。